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MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR5KM
OUTLINE DRAWING
10 0.3
6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
2.6 0.2
V Measurement point of case temperature
.................................................................. 5A q VDRM ...................................................... 400V / 600V q IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) V2
q IT (RMS) q UL
T1 TERMINAL T2 TERMINAL GATE TERMINAL
Recognized : File No. E80271
TO-220FN
APPLICATION Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltageV1 Voltage class 8 400 500 12 600 720 Unit V V
Non-repetitive peak off-state voltageV1
Symbol IT (RMS) ITSM I 2t PGM PG (AV) VGM IGM Tj Tstg -- Viso
Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage
Conditions Commercial frequency, sine full wave 360 conduction, Tc=103C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 5 50 10.4 3 0.3 10 2 -40 ~ +125 -40 ~ +125 2.0
Unit A A A2s W W V A C C g V
Feb.1999
Ta=25C, AC 1 minute, T1 * T2 * G terminal to case
2000
V1. Gate open.
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-a) Parameter Repetitive peak off-state current On-state voltage
!
Test conditions Tj=125C, VDRM applied Tc=25C, ITM=7A, Instantaneous measurement
@ # !
Limits Min. -- -- -- -- -- -- -- -- 0.2 -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15 V2 15 V2 15 V2 -- 3.8 50
Unit mA V V V V mA mA mA V C/ W C/ W
Gate trigger voltage V2
Tj=25C, VD=6V, RL=6, RG=330
Gate trigger
current V2
@ #
Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case V3 Junction to ambient
Gate non-trigger voltage Thermal resistance Thermal resistance
V2. High sensitivity (IGT 10mA) is also available. (IGT item ) V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V)
TC = 25C
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
102
7 5 3 2
100 (%)
GATE CHARACTERISTICS (, AND )
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III
101
7 5 3 VGT = 1.5V 2
PGM = 3W IGM = 2A
GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C)
VGM = 10V
GATE VOLTAGE (V)
IFGT I
100
7 5 3 2
Tj = 25C IGT = 15mA PGM = 0.3W
IRGT I
VGD = 0.2V 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE)
100 (%)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (C/W)
102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C)
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT)
MAXIMUM ON-STATE POWER DISSIPATION
TRANSIENT THERMAL IMPEDANCE (C/W)
7 5 4 3 2
ON-STATE POWER DISSIPATION (W)
102
10 9 8 360 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
101
7 5 4 3 2
100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160
CASE TEMPERATURE (C) AMBIENT TEMPERATURE (C)
140 120 100 80 60
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION
120 120 t2.3 100 100 t2.3 60 60 t2.3
360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105
7 5 3 2
100 (%)
TYPICAL EXAMPLE
104
7 5 3 2
103
7 5 3 2
102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
100 (%)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 102
LACHING CURRENT (mA)
7 5 4 3 2
LACHING CURRENT VS. JUNCTION TEMPERATURE 103
7 5 3 2
HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C)
101
7 5 4 3 2
VD = 12V 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE
DISTRIBUTION
102
7 5 3 2
101
7 5
T2 , G EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
3 + + 2 T2 , G - TYPICAL -
,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,,
+ T2 , G- TYPICAL EXAMPLE
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR5KM
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160 140 120 100 80 60 40 20
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C
BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT I QUADRANT
0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C)
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6 6
100 (%)
103
7 5 4 3 2
IRGT III
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
6V
A V RG
6V V
A RG
IRGT I
102
7 5 4 3 2
IFGT I
TEST PROCEDURE
6
TEST PROCEDURE
6V
A V RG
101 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE TRIGGER PULSE WIDTH (s)
TEST PROCEDURE
Feb.1999

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